Researchers from China Obtain High-quality InGaAs/GaAsSb Superlattice Structures

IInGaAs/GaAsSb superlattice structure is very attractive in photodetectors and light emitting devices. However, the growth of high quality GaAsSb alloys is a challenge. Recently, a research team from the Chinese Academy of Sciences (CAS) has successfully obtained high quality InGaAs/GaAsSb superlattice structures based on a broad analysis of growth mechanisms [1].